advanced power dual p-channel enhancement electronics corp. mode power mosfet simple drive requirement bv dss -20v low gate charge r ds(on) 45m fast switching characteristic i d -5.6a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without n otice 201501125 thermal data parameter total power dissipation 2 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.016 storage temperature range drain current, v gs @ 4.5v 3 -4.5 pulsed drain current 1 -20 parameter drain-source voltage gate-source voltage drain current, v gs @ 4.5v 3 halogen-free product 1 ap4955gm-hf rating -20 + 12 -5.6 s1 g1 s2 g2 d1 d1 d2 d2 g2 d2 s2 g1 d1 s1 ap4955 series are from advanced power innovated design and silicon process technology to achieve the lowest possib le on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the so-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v ? bv dss / ? t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.01 - v/ r ds(on) static drain-source on-resistance 2 v gs =-4.5v, i d =-5a - - 45 m v gs =-2.5v, i d =-4a - - 65 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.5 - -1.2 v g fs forward transconductance v ds =-5v, i d =-5a - 9 - s i dss drain-source leakage current v ds =-20v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-16v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 12v, v ds =0v - - + 100 na q g total gate charge i d =-5a - 19 30 nc q gs gate-source charge v ds =-16v - 3 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 6 - nc t d(on) turn-on delay time v ds =-10v - 9 - ns t r rise time i d =-1a - 10 - ns t d(off) turn-off delay time r g =3.3 ,v gs =-10v - 52 - ns t f fall time r d =10 - 24 - ns c iss input capacitance v gs =0v - 1400 2240 pf c oss output capacitance v ds =-20v - 270 - pf c rss reverse transfer capacitance f=1.0mhz - 230 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.6a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-5a, v gs =0 v , - 32 - ns q rr reverse recovery charge di/dt=100a/s - 22 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 135 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 ap4955gm-hf
ap4955gm-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate volta ge fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-5a v g =-4.5v 0 10 20 30 40 50 60 70 0 1 2 3 4 5 6 7 8 9 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 25 o c -5.0v -4.5v -3.0v -2.5v v g =- 2.0 v 30 35 40 45 50 55 2 3 4 5 -v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = -4 a t a =25 o c 0 10 20 30 40 50 60 0 1 2 3 4 5 6 7 8 9 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c -5.0v -4.5v -3.0v -2.5v v g =- 2.0 v 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c
ap4955gm-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristic s fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 1 2. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 1ms 10ms 100ms 1s dc 100 1000 10000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0 2 4 6 8 10 12 0 10 20 30 40 50 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-5a v ds =-16v 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse operation in this area limited by r ds(on)
marking information 5 ap4955gm-hf 4955gm ywwsss part number date code (ywwsss) y last digit of the year ww week sss sequence package code meet rohs requirement for low voltage mosfet only
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